低温沉积氧化锌薄膜电学特性  

ELECTRICAL PROPERTIES OF ZnO THIN FILMS DEPOSITED AT LOW TEMPERATURE

作　　者：孟凡英[1] 吕肖前[1] 李晖[1] 胡宇[1] 施旸[1] 余跃波[1] 江民林[1] 

机构地区：[1]上海交通大学物理系太阳能研究所,上海200240

出　　处：《太阳能学报》2009年第10期1323-1326,共4页Acta Energiae Solaris Sinica

摘　　要：利用金属有机物化学气相沉积系统在玻璃衬底上沉积氧化锌薄膜,在约160℃的低温生长条件下,通过改变n型掺杂气体硼烷的流量来调制薄膜电阻率和光学透过率。基于Hall效应测试分析,研究了掺杂剂硼烷流速对氧化锌薄膜电阻率,载流子浓度,Hall迁移率以及光学透过率的影响,此外还研究了薄膜电学特征参量随薄膜厚度的变化规律。经过一系列优化实验,在玻璃衬底上能够获得低温生长的氧化锌薄膜电阻率约2×10^(-3)Ω·cm,光学透过率的截止波长发生蓝移,从380nm延伸到近340nm。Boron-doped ZnO thin films were deposited on the glass substrates at low temperature of around 160℃ by MOCVD system in this work. The resistivity and optical transmittance were modified by changing the flow rate of B2H6 gas. Based on the measurement of Hall Effect, the characteristics of the ZnO thin films were investigated, including the resistivity, carrier concentration, Hall mobility and transmittance. Furthermore, the dependence of electrical properties of ZnO ： B thin film on the film thickness was also studied. As a result of optimizing the experimental parameters, the electrical resistivity of ZnO： B film on glass at low temperature is down to about 2×10^-3Ω·cm, the optical transmittance in the visible light region is able up to 90%, and the cut-off wavelength of the transmittance is shifted more to blue light, which is extended from 380nm to around 340nm.

关 键 词：低温沉积 氧化锌薄膜 电阻率 蓝移 

分 类 号：TN304[电子电信—物理电子学]