石英湿法腐蚀及侧壁晶棱修平工艺研究  

Research on Quartz Wet Etching and Flatting Process of Sidewall Arris

作　　者：王浩旭[1] 谢立强[1] 吴学忠[1] 李圣怡[1] 

机构地区：[1]国防科技大学机电工程与自动化学院,长沙410073

出　　处：《传感技术学报》2009年第12期1713-1716,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助项目资助(50375154)

摘　　要：以石英陀螺的微结构为研究对象,对石英的湿法腐蚀规律进行研究。选用500μm厚Z切向石英片,蒸镀10nm厚Cr膜和200nm厚金膜作为掩模层,选用40%氢氟酸和40%氟化铵的1:1混合溶液作为腐蚀液。通过在不同温度下的腐蚀试验,表明腐蚀速率随温度增加而增大,温度过低腐蚀过慢影响腐蚀效率,温度过高使石英侧壁表面粗糙度增加。经过试验摸索,在70℃下腐蚀,可获得表面质量较好的石英微结构。石英在湿法腐蚀中结构侧壁会产生两级晶棱,根据侧壁主要晶面的腐蚀速率,计算出修平侧壁两级晶棱所需时间分别为8h和27h,经过试验验证,在预计时间内,石英侧壁晶棱基本修平。Quartz gyroscope＇ microstructure is etched to study the quartz etching laws. A 500μm Z-cut quartz wafer is selected. 10 nm thickness Cr and 200 nm thickness Au films are deposited as the etch mask. The mixture of 40% HF and 40% NH4F（1：1） at 70℃ is used as the quartz etchant. Wet etching experiments are carried out at different temperatures. Etch rate increases while the temperature increases. Low temperature reduces etching efficiency and high temperature makes the roughness on the sidewall surface increase. There are two steps of arrises on the center of the quartz sidewall in wet etching process. The time for which the two arrises were flatted is worked out 8h for the one and 27h for the other according to the etch rate of the quartz sidewall surface. The etching experiments show that the arrises on quartz sidewall are basically flatted within the budgetary time.

关 键 词：石英 湿法腐蚀 侧壁晶棱 修平工艺 

分 类 号：TN305.7[电子电信—物理电子学]