300mm硅片表面延性磨削机理研究  

Study on Removal Mechanism of Ductile-Mode Grinding in 300mm Silicon Wafer Surface Grinding Process

作　　者：葛钟[1] 库黎明[1] 陈海滨[1] 盛方毓[1] 索思卓[1] 闫志瑞[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《微电子学》2009年第6期879-882,共4页Microelectronics

基　　金：国家02专项(2008ZX02401)

摘　　要：根据脆性材料实现延性磨削时存在临界深度的理论，通过设定磨削参数，使之满足硅片的延性磨削条件。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）对磨削硅片表面和截面进行分析研究。研究结果表明：硅片表面形成规律的磨削印痕，且磨削印痕微弱，在硅片表面留下的磨削沟槽保留延性磨削特征，硅片表面无微细裂纹和因脆性崩裂产生的凹坑；硅片截面明显地分为非晶层、次表面损伤层、单晶硅层，非晶层厚度约为50～100nm，表面微细裂纹完全消失，次表面损伤层厚度约为50～150nm，次表面损伤层存在微细裂纹。Based on the theory that there exists a critical depth for ductile-mode grinding of brittle materials, grinding parameters were set to meet the requirements for ductile grinding of silicon wafers. Surface and cross section of the ground wafer were analyzed using SEM and TEM. It has been shown that weak and regular grinding marks were formed on the wafer surface, and the characteristics of ductile grinding were retained for grinding grooves, and the wafer section was divided into amorphous layer, sub-surface damage layer and single crystal silicon. The amorphous layer, where surface cracks completely disappear, is about 50 nm to 100 nm thick, and the sub-surface damage layer, where fine cracks occur, is about 50 nm to 150 nm thick.

关 键 词：300 mm硅片 延性磨削 临界深度 损伤层 

分 类 号：TN43[电子电信—微电子学与固体电子学]