CVD金刚石薄膜表面的缺陷研究  

Study on Defects in the Surface of CVD Diamond Films

作　　者：周灵平[1] 靳九成[1] 李绍禄[1] 颜永红[2] 朱正华[2] 

机构地区：[1]湖南大学材料测试研究中心 [2]湖南大学应用物理系

出　　处：《人工晶体学报》1998年第2期126-131,共6页Journal of Synthetic Crystals

基　　金：湖南省计委和科委资助

摘　　要：用ＳＥＭ方法观察分析了ＣＶＤ金刚石薄膜表面的缺陷形貌和结构，直观的两种缺陷为孪晶和孔洞。孪晶反映了晶粒的不完整性，它的产生取决于气相中活性分子的浓度与生长表面活性位数目的比值，孪晶比率随碳源浓度升高和衬底温度的降低而增大；孔洞反映了膜的不致密性，其产生与膜生长速率和衬底表面初始成核密度切相关，孔洞密度随碳源浓度升高和衬底温度的升高而增大。The shape and microstructure of defects in the surface of CVD diamond films were observed and analysed by SEM technique.The defects includ twin crystal and hole. The twin crystal reflects imperfection of diamond grains.Its forming depends on concentration of active molecule in the gas phase and number of activation on the growth surface. The rate of twin crystal increases with increasing of concentration of carbon source gas and lowering of substrate temperature. The hole reflects macro homogeneity of diamond films. Its forming is concerned in growth rate of diamond films and nucleation density on the surface of substrate. Hole density in the surface of diamond films increases with increasing of concentration of carbon source gas and substrate temperature.

关 键 词：金刚石薄膜 缺陷 孪晶 表面形貌 CVD 

分 类 号：O613.71[理学—无机化学] O484[理学—化学]