电荷泵技术在高压MOS晶体管可靠性研究中的应用(英文)  

Application of Charge Pumping Technology on High-Voltage MOSFET Reliability Investigation

作　　者：禹玥昀[1,2] 唐逸[1] 万星拱[1] 任铮[1] 胡少坚[1] 周伟[1] 李曦[2] 石艳玲[2] 

机构地区：[1]上海集成电路研发中心,上海200000 [2]华东师范大学,上海200062

出　　处：《电子器件》2009年第6期1023-1026,共4页Chinese Journal of Electron Devices

基　　金：This work was supported by Foundation of Shanghai Science&Technology Committee Grants 075007033 and 08706200802;上海市科委启明星项目资助(07QB14018,08706200802)

摘　　要：主要阐述了电荷泵技术在14 V HV MOS晶体管可靠性研究中的应用。使用了一种改进的电荷泵技术分析了经过热载流子加压后的器件特性。使用这种方法,我们可以精确描述器件损伤的位置和程度,以及可以精确评估由于HCI效应引起的界面缺陷的变化,为器件优化与工艺改进提供重要参考信息。The application of charge pumping technology on High-Voltage（HV） 14 V MOSFET reliability investigation is described. Device after HCI stress is analyzed by a developed asymmetric charge pumping technology. With this method,the damage location and degree are found and the variation of inter/ace traps caused by HCI are quantified. Therefore, the charge pumping technology can provide important information for the device optimization and process improvement.

关 键 词：电荷泵 界面缺陷密度 高压MOS 热载流子注入 

分 类 号：TN432[电子电信—微电子学与固体电子学]