氩气压强对溅射法制备Ga掺杂ZnO薄膜性能的影响  

Dependence of Argon Gas Pressure on Properties of Ga Doped ZnO Films Deposited by RF Sputtering

作　　者：马仙梅[1,2,3] 荆海[1,3] 王永刚[1,2] 王龙彦[1,2,3] 王中健[1,2,3] 马凯[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院研究生院,北京100039 [3]北方液晶工程研究开发中心,吉林长春130031

出　　处：《液晶与显示》2009年第6期836-839,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.60576054;No.60576043;No.60576056);教育部新世纪优秀人才支持计划(No.05-0326);长春市科技局产业化项目(No.2006303)

摘　　要：采用射频磁控溅射法在玻璃衬底上制备了高质量的Ga掺杂ZnO透明导电薄膜(GZO)。通过X射线衍射、原子力显微镜、四探针电导率测试仪等表征方法研究了溅射气压对薄膜结晶特性及导电性能的影响。所制备的GZO薄膜是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向。随着溅射气压的增大,薄膜方块电阻与薄膜电阻率均随之增大。最小方块电阻可达17.6Ω/□,最小薄膜电阻率为7.3×10-4Ω.cm。另外,GZO薄膜在可见光范围内的透过率达到了90%以上。Highly conducting and transparent gallium doped zinc oxide （GZO） thin films had been deposited by r.f. magnetron sputtering method on glass substrates. The dependence of GZO films crystal and conducting properties on argon gas pressure was investigated by X-ray diffraction （XRD）, atomic force microscopy （AFM） and four point probe methods. The obtained GZO films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the （002） crystallographic direction. As argon gas pressure increased, the sheet resistance and resistivity both increased with the lowest value of 17.6Ω/□ and 7.3 × 10^-4 Ω· cm, respectively. In addition, the transmittance of the GZO films in the visible range was over 90%.

关 键 词：GZO 磁控溅射 氩气压强 

分 类 号：TN304.21[电子电信—物理电子学]