LPCVDSi基转换生长3C-SiC薄膜的光学性质初探  

The Optical Properties on Conversion of 3C-SiC Thin Film Based on Si Substrate by LPCVD

作　　者：杨治美[1] 张云森[2] 廖熙[1] 杨翰飞[1] 晋勇[2] 孙小松[2] 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院微电子学系微电子技术四川省重点实验室,成都610064 [2]四川大学材料科学与技术学院,成都610064

出　　处：《光散射学报》2009年第4期304-308,共5页The Journal of Light Scattering

摘　　要：本文采用LPCVD技术在高温条件下,利用甲烷和氢气混合气体作为碳源,在n-Si(111)衬底上制备3C-SiC薄膜。通过XRD、XPS、SEM、FT-IR和PL研究发现:温度对3C-SiC薄膜的形貌和晶体质量有较大的影响,并且生长温度对3C-SiC薄膜的780 cm-1左右的FT-IR反射峰强度影响非常大;在室温测试条件下,3C-SiC薄膜有较强的蓝光波段的荧光峰。In this article, the 3C--SiC film grown on Si substrate by LPCVD, using methane and hydrogen gas mixture as carbon source, has been studied. The 3C--SiC film was characterized by XRD, XPS,SEM、FT--IR and PL spectroscopy. It was found that the morphology and the crystal quality of 3C--SiC thin film were influenced by the growth temperature, and that the FT--IR reflection peak intensity of 780 cm-1 was also influenced by the growth temperature on the 3C--SiC film; at room temperature, there are a strong blue band fluorescence peak of the 3C--SiC thin film.

关 键 词：立方碳化硅 薄膜 光学性质 晶格失配 热膨胀系数 

分 类 号：TN304.054[电子电信—物理电子学]