化学气相沉积制备SiC涂层——Ⅱ.动力学研究  

CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE —II. Thermodynamic Studies

作　　者：朱庆山[1] 邱学良[1] 马昌文[1] 

机构地区：[1]清华大学核能技术设计研究院新材料室

出　　处：《化工冶金》1998年第4期289-292,共4页

摘　　要：１前言碳化硅材料具有很高的强度和硬度、低的热膨胀系数和良好的导热性能，是一种重要的高温结构材料和高温半导体材料［１］，有比较好的热稳定性和较高的击穿电压及宽广的能带结构．研究表明，在抗氧化温度低于１８００ｏＣ时，它是最好的抗氧化涂层材料［２］．碳化硅...CVD SiC from the H 2-MTS system has been systematically investigated. It is demonstrated that thermodynamic simulation can well predict the deposition of single-phase SiC. Experimental results show that the decomposition of MTS is a first order reaction and the deposition process is controlled by chemical kinetics at 800～1 000 oC. Above 1 000 oC, the whole process is limited by mass transfer. X-ray diffraction shows that stoichiometric β-SiC is deposited. SEM analysis reveals that the SiC coating consists of pebble-shaped SiC particles. The growth of SiC layer can be described by the Volmer-Weber model.

关 键 词：化学气相沉积 涂层 动力学 碳化硅 石墨 

分 类 号：TB35[一般工业技术—材料科学与工程]