基于电荷泵法的N-LDMOS界面态测试技术研究  

Technique Research of Measuring Interface-states Based on CP Method in N-LDMOS

作　　者：刘斯扬[1] 钱钦松[1] 孙伟锋[1] 李海松[1] 时龙兴[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《固体电子学研究与进展》2009年第4期597-601,605,共6页Research & Progress of SSE

基　　金：江苏省自然科学基金支持项目(项目编号:BK2008287)

摘　　要：详细研究了高压N-LDMOS器件的电荷泵(CP)测试技术,指出了高压N-LDMOS器件的特殊结构对其CP测试结果的影响,并解释了高压N-LDMOS器件的CP曲线不饱和的原因,同时对由于不同的源漏偏压造成的高压N-LDMOS器件CP曲线的变化进行了深入的理论分析。这些结论可以为CP法测量界面态密度提供实验指导,同时为更加准确地分析高压LDMOS器件的CP测试曲线提供理论指导。A measuring technique based on CP method for high voltage N-LDMOS is detailedly researched in this paper. The special configuration influences on CP measuring results of N-LDMOS and the unsaturated phenomena of CP curve are discussed in detail. At the same time, the change of CP curve in high voltage N-LDMOS which is caused by different reverse voltages is analyzed. These conclusions not only offer experimental instructions for measuring the density of interface-states with CP method but also give theoretic instructions for analyzing CP curve in high voltage N-LDMOS more accurately.

关 键 词：N型横向双扩散金属氧化物晶体管 电荷泵测试 热载流子 

分 类 号：TN386[电子电信—物理电子学]