带有本征薄层的异质结太阳能电池  

Hetero-Junction with Intrinsic Thin-Layer Solar Cells

作　　者：刘艳红[1] 刘爱民[1] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116024

出　　处：《半导体技术》2010年第1期1-7,共7页Semiconductor Technology

摘　　要：带有本征薄层的异质结(HIT)太阳能电池制备工艺温度低、转换效率高、高温特性好,是低价高效电池的一种。根据相关文献,遵循HIT电池发展的过程,从原理、结构、制备工艺等角度对其进行了深入分析,指出PECVD技术在制备HIT电池中存在的问题,并对HWCVD法制备高效HIT电池的前景进行了探讨,同时分析了a-Si:H/Si界面钝化、双面异质结结构、表面织构及栅线的优化设计等技术手段对制备高效HIT电池的重要性。Hetem-junction with intrinsic thin-layer （HIT） solar cells explored by Sanyo Group is characterized by low processing temperature, high efficiency and superiority of high-temperature performances. The principle, structure and technology of HIT are analyzed. The instability of PECVD, which is the key technology to deposit the a-Si：H, is thought to limit the further improvement of HIT efficiency. Otherwise,the possibility of HWCVD for high-efficiency HIT is discussed. The interface passivation of a-Si ： H/Si, double hetero-junction structure, surface texture and optimization of grid are also analyzed to be important for high-performance HIT solar cell.

关 键 词：HIT太阳能电池 PECVD HWCVD 

分 类 号：TM914.41[电气工程—电力电子与电力传动]