用阶梯状掺杂埋层对超浅结进行C-V剖面分析(英文)  

C-V Profiling of Ultrashallow Junctions Using a Buried Layer with Step-Like Doping Profile

作　　者：徐翠芹[1,2] Popadic Milos Nanver L.K. 茹国平[1] 

机构地区：[1]复旦大学微电子系专用集成电路与系统国家重点实验室,上海200433 [2]代尔夫特工业大学ECTM/DIMES实验室,荷兰代尔夫特2600

出　　处：《半导体技术》2010年第1期39-42,89,共5页Semiconductor Technology

基　　金：Shanghai-Applied Materials Research Development Fund(07SA06)

摘　　要：研究了应用双边C-V法测量超浅结(如p+-n结)的掺杂分布。推导了在已知p+-n结的电容-电压(C-VR)关系、n区掺杂、以及热平衡下n区耗尽层宽度(xn0)的情况下计算p区掺杂浓度分布的公式。xn0是计算p区掺杂分布所需的一个关键参数,通过将n区掺杂设计成阶梯状,可实现对xn0的精确提取。用Medici对具有相同的阶梯状掺杂n区的p+-n和n-肖特基结进行器件仿真可得其C-VR关系。运用常规C-V法,由肖特基结的C-VR关系可提取出n区掺杂浓度。实现了对xn0的精确提取,其精度达1.8nm。基于精确的xn0,运用双边C-V法提取的p+区的掺杂浓度分布与Medici仿真结果非常吻合。Two-sided C-V technique was investigated for application in doping profile characterization of Si ultrashallow p＋-n junctions. Expressions were derived for the evaluation of the doping profile in the p＋ region, based on the knowledge of capacitance-voltage （C-VR） relationship of the p＋-n diode, the doping profile in n region, and the depletion width in n region at thermal equilibrium （xn0）. Stepped doping profile in n region was designed for accurate determination of xn0, a crucial parameter for the extraction of the doping profile in the p＋ region. Medici simulations were carried out for the C-VR relationships of the p ＋ -n and n-Schottky junctions with the same step-like n profile. The doping profile in n region could then be extracted from the C-VR relationship of the Schottky diode. The xn0 is determined with an accuracy of 1.8 nm by a criterion developed. And the doping profile in the p ＋ region can finally be extracted and shown to be in good agreement with the Medici simulation results.

关 键 词：双边结 电容-电压 超浅结 

分 类 号：TN304.07[电子电信—物理电子学] TN305.3