130nm NMOS器件的单粒子辐射电荷共享效应  

SEE Charge Sharing Effect of 130nm NMOSFET

作　　者：陈超[1] 吴龙胜[1] 韩本光[1] 方勇[1] 刘佑宝[1] 

机构地区：[1]西安微电子技术研究所,西安710054

出　　处：《半导体技术》2010年第1期46-49,93,共5页Semiconductor Technology

基　　金：国家部委基金项目(51308010608)

摘　　要：研究了同一p阱内两个130nm NMOS器件在受到重离子辐射后产生的电荷共享效应。使用TCAD仿真构造并校准了130nm NMOS管。研究了在有无p+保护环结构及不同器件间距下,处于截止态的NMOS晶体管之间的电荷共享,给出了电荷共享效应与SET脉冲电流产生的机理。同时分析了NMOS晶体管中的寄生双极管效应对反偏漏体结电荷收集的加剧作用。仿真结果表明,p+保护环可以有效地减小NMOS器件间的电荷共享,加速SET脉冲电流的泄放,证实了p+保护环对器件抗单粒子辐射的有效性,从而给出了该方法在抗单粒子辐射器件版图设计中的可行性。The charge sharing effect between 130 nm NMOS devices in the same p-well occurring after heavy ion irradiation was investigated. TCAD simulation was used to generate and calibrate the 130 nm NMOSFET. The charge sharing effects between two 130 nm off-NMOSFETs with and without p＋ guard-ring, and with different device distance were explored. The charge sharing effect and SET current generating mechanisms wre represented. The exacerbating effect of parasitic bipolar effect in the charge collection in the reverse-biased drain-body junction of an off-NMOSFET was also represented. The simulation results demonstrate that the p＋ guard-ring can effectively reduce the charge sharing effect between NMOSFETs and accelerate the discharge of the SET current. The effectiveness of p ＋ guard-ring using in the migrating of single event effect and the feasibility of its use in radiation hardening by layout design are validated.

关 键 词：电荷共享 超深亚微米 器件模拟 单粒子辐射 寄生双极管效应 

分 类 号：TN386.1[电子电信—物理电子学]