碱性条件下硬盘基板两步抛光法的实验研究  

Experimental Research of Two-Step Polishing Method for Hard Disk Substrate at Alkaline Condition

作　　者：孙业林[1] 刘玉岭[1] 刘效岩[1] 魏恒[1] 谢竹石[1] 

机构地区：[1]河北工业大学微电子所,天津300130

出　　处：《半导体技术》2010年第1期68-71,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(10676008);高等学校博士学科点专项科研基金(20050080007);河北省教育厅科学研究计划项目(2007429);天津市自然科学基金科技展计划项目(0438014211)

摘　　要：在对硬盘基板CMP机理进行分析后,采用河北工业大学研制的计算机硬盘抛光专用碱性抛光液,选择氧化剂添加量、抛光压力两个重要参数分别进行实验,讨论它们在两步抛光方法中的重要作用。总结实验结果后,得出了上述两个参数在两步抛光方法中的影响规律,提出粗抛光中,应该采用较高氧化剂添加量和抛光压力以得到较高的去除速率和一定的表面质量;精抛光中,应该采用低氧化剂含量、低抛光压力以得到较完美的表面质量。用此方法抛光,较好地解决了当前硬盘基板加工中抛光速率与表面质量之间的矛盾。After the analysis of CMP theory, dedicated slurry of hard disk developed by Hebei University of Technology were selected in this experiment. An experiment were designed with two important parameters contained polishing pressure and volume of oxidizer. The higher polishing rate and better surface quality are achieved by means of larger volume of oxidizer and higher polishing pressure in rough polishing; relatively, perfect surface quality are attained by means of lower volume of oxidizer and lower polishing pressure in fine polishing. By the combined method, the contradictions between polishing rate and surface quality in processing of hard disk are solved effectively.

关 键 词：两步抛光法 去除速率 粗糙度 氧化剂 抛光压力 

分 类 号：TN305.2[电子电信—物理电子学] TN304.21