PMOSFET动态NBTI效应的研究  

Study on Dynamic NBTI Effect in PMOSFET

作　　者：宋芳芳[1] 解江[2] 李斌[1] 章晓文[2] 

机构地区：[1]华南理工大学电子与信息学院微电子研究所,广州510640 [2]工业和信息化部电子第五研究所,广州510610

出　　处：《半导体技术》2010年第1期79-83,共5页Semiconductor Technology

基　　金：电子元器件可靠性物理及其应用技术国家级重点实验室基金(9140C0301030901)

摘　　要：负偏压温度不稳定性效应(NBTI)已经成为影响CMOS集成电路可靠性的一个关键因素,而动态应力条件下的NBTI效应对器件和电路的影响越来越受到关注。对PMOSFET的动态NBTI效应进行了系统介绍,讨论了动态应力条件下NBTI(DNBTI)效应和静态应力下NBTI(SNBTI)退化机理,综述了DNBTI效应的动态恢复机制以及影响因素,最后介绍了NBTI效应对电路的影响。随着器件尺寸的日益缩小,如何提高电路的可靠性变得日益重要,进一步研究NBTI效应对电路的影响从而进行NBTI电路级可靠性设计已成为集成电路设计关注的焦点。dynamic stress PMOSFET was Negative bias temperature conditions affecting device instability （NBTI） is a key factor of device reliability. NBTI under and circuit attracts introduced. The differences between dynamic more and more attention. Dynamic NBTI for NBTI and static NBTI were discussed. DNBTI was reviewed on dynamic recovery mechanisms and affecting factors. The impact of NBTI on circuits was given. With the scale of the device decreasing, how to improve the reliability of circuits is becoming more and more important. So further studying of NBTI effect on circuits and the circuit-level reliability design becomes the main consideration in IC design.

关 键 词：PMOS 动态NBTI 可靠性 恢复效应 

分 类 号：TN386.1[电子电信—物理电子学] TN402