Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes  

作　　者：杨臻 李建军 康玉柱 邓军 韩军 邹德恕 沈光地 

机构地区：[1]Beijing Optoelectronic Technology Laboratory,Beijing University of Technology

出　　处：《Optoelectronics Letters》2010年第1期21-23,共3页光电子快报（英文版）

基　　金：supported by the Science and Technology Plan of the Beijing Education Committee (No.KM200810005002) and PHR(IHLB)

摘　　要：Three kinds of 650 nm AlGaInP resonant cavity light-emitting diodes (RCLEDs) are fabricated by metal organic chemical vapor deposition (MOCVD) with different numbers of pairs of top distributed Bragg reflectors (DBRs), which are 15, 10 and 5, respectively. By comparing the full width at half maximum (FWHM), light power and the angular far-field emission of the devices, the device with 15 pairs of top DBRs shows the best performance. Its FWHM is 13.4 nm and the light power is 0.63 mW at a driving current of 30 mA.Three kinds of 650 nm AlGaInP resonant cavity light-emitting diodes （RCLEDs） are fabricated by metal organic chemical vapor deposition （MOCVD） with different numbers of pairs of top distributed Bragg reflectors （DBRs）, which are 15, 10 and 5, respectively. By comparing the full width at half maximum （FWHM）, light power and the angular far-field emission of the devices, the device with 15 pairs of top DBRs shows the best performance. Its FWHM is 13.4 nm and the light power is 0.63 mW at a driving current of 30 mA.

关 键 词：分布布拉格反射 发光二极管 铝镓铟磷 光性能 谐振腔 反射波长 金属有机化学气相沉积 MOCVD 

分 类 号：TN312.8[电子电信—物理电子学]