非晶硅太阳能电池背反ZnO:Al薄膜制备  

ZINC OXIDE:ALUMINUM FILMS AS BACK REFLECTOR IN AMORPHOUS SILICON SOLAR CELLS

作　　者：肖海波[1] 曾湘波[1] 刘石勇[1] 彭文博[1] 石明吉[1] 张长沙[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《硅酸盐学报》2010年第1期46-49,共4页Journal of The Chinese Ceramic Society

基　　金：国家973计划(2006CB202604);国家自然科学基金(60576036)资助项目

摘　　要：以ZnO:Al(2%Al2O3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响。结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响。ZnO:Al的电阻率主要取决于衬底温度和溅射功率。综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反应腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10-4Ωcm的ZnO:Al薄膜。制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池。与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%。The ZnO：Al films were prepared on glass using a ZnO ceramic target with Al 2 O 3 of 2% in mass by radio frequency magnetron sputtering.The effect of deposition parameters （such as sputtering power,gas pressure and substrate temperature） on the optical and electrical properties of zinc oxide：aluminum （ZnO：Al） films was investigated.The results show that the transmittance of the ZnO：Al films is mainly affected by sputtering power and gas pressure.The substrate temperature has a slight impact on the transmittance.The resistivity of the ZnO：Al films is determined by substrate temperature and sputtering power.The deposition parameters （i.e.,sputtering power：200 W,gas pressure：0.6 Pa and substrate temperature：200 ℃） for both the transmittance and resistivity were optimized.The ZnO：Al films with the high transmittance （〉85%） and low resistivity （7.6×10-4Ωcm） can be obtained under the optimized sputtering conditions.The short-circuit current density of the ZnO：Al films for a ZnO：Al/Ag/ss （stainless steel） back reflector electrode in a-Si：H solar cells is higher than 16%,compared to that of the cells deposited on stainless steel substrate without back reflector.

关 键 词：掺铝氧化锌薄膜 背反电极 非晶硅太阳能电池 磁控溅射 

分 类 号：TB32[一般工业技术—材料科学与工程]