高效率976nm激光器材料  

976 nm High-Efficiency Semiconductor Laser Material

作　　者：田秀伟[1] 陈宏泰[1] 车相辉[1] 林琳[1] 王晶[1] 张世祖[1] 徐会武[1] 刘会民[1] 王晓燕[1] 杨红伟[1] 安振峰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第1期29-32,共4页Micronanoelectronic Technology

摘　　要：使用自洽二维数字模拟软件优化半导体激光器的外延结构,对GaInAs/AlGaAs分别限制压应变单量子阱结构进行了模拟,研究了包层和波导层的Al组分对工作电压的影响。根据模拟结果,采用金属有机化学淀积(MOCVD)技术,外延生长了单量子阱976nm激光器材料。利用该材料制作成2mm腔长的连续(CW)单管器件,采用C-mount载体标准封装,并进行了测试。测试结果表明,模拟与实验的结论一致,降低优化包层和波导层的Al组分可以减小工作电压,从而提高了976nm半导体激光器的转换效率。室温下,当工作电流为500A/cm2时,包层和波导层Al组分分别为0.35和0.15时,激光器的工作电压降低为1.63V,使得电光转换效率达到67%。The epitaxial structure of semiconductor lasers was optimized by the self-consistent two-dimension digital simulation software. The GaInAs/AIGaAs separate confinement compressive strain single quantum well structure was simulated, and the effects of the Al compositions in the cladding and waveguide layers on the operating voltage were studied. According to simulation results, the single quantum well material of 976 nm lasers was grown by the metal organic chemical vapor deposition （MOCVD）. The CW single device with 2 mm cavity length was fabricated and packaged by C-mount. The test results show that the simulation corresponds with the experimental conclusion. The decreasing of Al compositions in the cladding and waveguide layers can reduce the operating voltage and improve the conversion efficiency of 976 nm semiconductor lasers. At room temperature, the operating voltage is 1.63 V at 500 A/cm^2 and the conversion efficiency reaches 67% when the Al compositions in cladding and waveguide layers are 0.35 and 0.15, respectively.

关 键 词：金属有机化学淀积 压应变 转换效率 自洽二维数字模拟 工作电压 AL组分 

分 类 号：TN248.4[电子电信—物理电子学]