硅硅直接键合界面杂质分布研究  

Impurity Distribution on the Interface of Silicon Direct Bonding

作　　者：霍文晓[1] 

机构地区：[1]青岛农业大学理学与信息科学学院,山东青岛260019

出　　处：《现代电子技术》2010年第2期157-159,共3页Modern Electronics Technique

摘　　要：根据硅片直接键合工艺中硅片的杂质分布与扩散规律,使用集成电路模拟软件T-SUPREM 4建立一个键合过程中杂质再扩散模型。该模型有利于MEMS和IC电路的集成化设计。使用该模型对键合热处理时的杂质再扩散进行模拟,得到了在500℃温度下进行键合时界面处杂质的分布曲线。结果表明,热处理1 h杂质再扩散已基本停止;键合界面处的氧化层对杂质扩散有明显的阻止作用,这有利于改善器件性能。A model of silicon direct bonding is presented by T - SUPREM4, and it is expedient to integrated design of MEMS and IC. The model simulates the impurity distribution during direct bonding at 500℃ according to the law of diffusion in semiconductor and the bonding process. The result proves the impurity distribution has stopped generating after heat treatment 1 h. And the total impurity in silicon with oxide is much less than that without oxide,which is propitious to improve the property of power device.

关 键 词：微电子机械系统 直接键合 杂质分布 功率器件 

分 类 号：TN305.96[电子电信—物理电子学]