硅单结晶体管γ射线辐照电阻变化规律研究  

Study of Change of Si Unijunction Transistor Base Resistance in γ-Radiation

作　　者：赵鸿飞[1] 杜磊[1] 何亮[1] 包军林[2] 

机构地区：[1]西安电子科技大学大学技术物理学院,陕西西安710071 [2]西安电子科技大学大学微电子学院,陕西西安710071

出　　处：《电子科技》2010年第2期33-35,共3页Electronic Science and Technology

基　　金：部委项目基金资助项目

摘　　要：对在γ射线辐照条件下的单结晶体管基区阻值进行了多点测量和实时监测。结果发现:单结晶体管基区电阻值随γ射线辐照剂量的增加,具有先减小后增大的规律。对比国内外相关实验结果,从γ射线与物质作用微观分析,证明位移效应是单结晶体管基区电阻在γ射线辐照下的主要效应,但它较电离效应具有一定滞后性。This paper provides the change of base resistance in Si-UJT radiated by^60Co γ-ray. Muhipoint measurement and real-time monitoring show that the base resistance decreases immediately first and then increases slowly. Its comparison with domestic and international related research results proves that displacement effect is the major effect of base resistance in Si-UJT irradiated by^60Co γ-ray, but it lags behind ionization effect from microanalysis of the interaction between γ-ray and Si material.

关 键 词：单结晶体管(UJT) Γ射线 实时监测 基区电阻 

分 类 号：TN325[电子电信—物理电子学]