不同铝掺杂量ZnO薄膜性能的研究  

On the properties of ZnO thin films with different contents of Aluminum as dopant

作　　者：穆慧慧[1] 王海燕[1] 赵会仙[1] 姚宁[1] 邢宏伟[1] 薛进奎[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,河南郑州450052

出　　处：《真空》2010年第1期39-42,共4页Vacuum

摘　　要：以铝掺杂质量分数为1%、2%、3%的Zn/Al合金为靶材,采用直流反应磁控溅射技术在玻璃衬底上制备了不同铝含量ZnO:Al(AZO)透明导电薄膜。研究了衬底温度对AZO薄膜电学性能的影响;同时,研究铝掺杂量不同、电阻率相同的AZO薄膜的载流子浓度与迁移率的关系。结果表明:随着Al掺杂量的增加,薄膜最佳性能(透过率90%,电阻率6×10-4Ω·cm左右)时的衬底温度值会降低;电阻率相同的样品,1%铝掺杂的薄膜迁移率和透光率均高于2%铝掺杂薄膜的。The transparent and conductive AZO thin films were deposited on glass substrate by DC reactive magnetron sputtering from Zn/A1 ahoy targets doped with 1, 2 and 3wt.% aluminium, and the effect of substrate temperature on the eletric propefites of AZO films was investigated including the relationship between carrier density and carrier mobility of AZO films when the concentration of AI dopant is different but the resistivity remains unchanged. The results indicated that with the increasing dopant content the substrate＇s optimum reaction temperature lowers. For the samples with the same resistivity, the carrier mobility and transmittence of 1wt% Al-doped films are higher than 2wt% Al-dpoed ones.

关 键 词：铝掺杂量 ZNO薄膜 载流子浓度 载流子迁移率 直流反应磁控溅射 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]