2．8GHz薄膜体声波谐振器的研究  

Study on 2.8 GHz Thin Film Bulk Acoustic Resonator

作　　者：江洪敏[1] 马晋毅[1] 汤劲松[1] 周勇[1] 毛世平[1] 于新晓[1] 刘积学[1] 

机构地区：[1]四川压电与声光技术研究所,重庆400060

出　　处：《压电与声光》2010年第1期1-2,14,共3页Piezoelectrics & Acoustooptics

摘　　要：通过采用微机电系统（MEMS）和微声电子方法，研究了硅基片上横膈膜结构薄膜体声波谐振器（FBAR）。器件的串联谐振频率fs=2．75GHz。并联谐振频率fp=2．8GHz，插入损耗IL=-3．7dB，并联谐振频率品质因子Qp=260，有效机电耦合系数Keff^2=4．5％。A thin film bulk acoustic resonator（FBAR）fabricated on Si substrate with membrane structure oy MEMS and micro-electro-acoustic technologies was studied. The tested device has a series resonant frequency fs of 2.75 GHz and a parallel resonant frequency fp of 2, 8 GHz. The insertion loss of -3.7 dB,the parallel resonant frequency quality factor （Q） of 260 and the efficient electromechanical coupling factor Keff^2 of 4.5% have been achieved.

关 键 词：薄膜体声波谐振器 横膈膜 微机电系统 

分 类 号：TN015[电子电信—物理电子学]