ZrN扩散阻挡层与SiCON低k介质界面特性XPS研究  

XPS Study on Interfacial Properties Between ZrN Diffusion Barrier Layer and SiCON Low-k Dielectric Film

作　　者：杨春晓[1] 张驰[1] 徐赛生[1] 丁士进[1] 张卫[1] 

机构地区：[1]复旦大学微电子学系ASIC和系统国家重点实验室,上海200433

出　　处：《半导体技术》2010年第2期105-108,共4页Semiconductor Technology

基　　金：国家基础研究重点发展项目(2006CB302703);"先进互连材料和概念"国际研究培训组中的中国教育部支持

摘　　要：对ZrN扩散阻挡层与SiCON低k介质(k=2.35)的界面特性进行了XPS分析。实验结果表明,刚淀积的样品中ZrN与SiCON薄膜之间有一定程度的相互扩散并形成界面区。在界面区内Zr与SiCON薄膜中O及N元素相互作用成键,表明ZrN/SiCON界面有良好的黏附性能。400℃退火后,除受表面氧化作用干扰的O和N元素外,未观察到界面中其他元素Zr,Si和C有新的扩散,说明界面稳定性很好。The interface characteristic between thin ZrN diffusion barrier layer and SiCON low dielectric constant （k = 2.35） film were investigated by X-ray photoelectron spectroscopy （XPS）. The experimental data show that certain degree inter-diffusions occur between ZrN layer and SiCON film for the as-deposited sample, resulting in the formation of an interphase in the ZrN/SiCON contact system. Within the interphase, Zr interacted with O as well as N from SiCON film as a result multiple bonds are formed. This indicates good adhesion between ZrN layer and SiCON film. After 400℃ annealing, no further element diffusions of Zr, Si or C are observed, except O and N whose contents are confused due to the sample surface oxidation.

关 键 词：界面 ZrN阻挡层 SiCON低介电常数薄膜 X射线光电子能谱 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]