TiO_2/SiO_2和TiO_2/SiO_xN_y层叠结构高k栅介质比较研究  

Comparative Study of TiO_2/SiO_2 and TiO_2/SiO_xN_y High-k Gate Dielectric Stacks

作　　者：徐文彬[1] 王德苗[2] 

机构地区：[1]集美大学信息工程学院,福建厦门361021 [2]浙江大学信电系,杭州310027

出　　处：《半导体技术》2010年第2期109-112,共4页Semiconductor Technology

基　　金：国家自然科学基金(50172042);集美大学预研基金(4411-C60825)

摘　　要：以射频磁控溅射为主要工艺,制备了TiO2/SiO2和TiO2/SiOxNy两种层叠结构栅介质。对C-V特性和漏电特性的测试表明,SiO2和SiOxNy等界面层的引入有效地降低了TiO2栅介质电荷密度及漏电流,而不同层叠结构的影响主要通过界面电学性能的差异体现出来。对漏电特性的进一步分析显示,TiO2/SiO2结构中的缺陷体分布和TiO2/SiOxNy结构中的缺陷界面分布是导致电学性能差异的主要原因。综合比较来看,TiO2/SiOxNy结构栅介质在提高MOS栅介质性能方面有更大的优势及更好的前景,有助于拓展TiO2薄膜在高k栅介质领域的应用。Two gate dielectric stacks of TiO2/SiO2 and TiO2/SiOxNy were made via RF magnetron sputtering. C-V and I-V characterizations show that the interface layers of SiO2 and SiOxNy have effectively decrease the dielectric traps and leakage currents of TiO2. Influences of different stack structure were mainly reflected by the interface electrical properties. The further investigation of leakage characters show that bulk traps in TiO2/SiO2 and interfacial traps in TiO2/SiOx Ny are the main factors that lead to the differences of electrical properties. Comprehensive comparisons show that TiO2/SiOx Ny structure gate dielectric has larger advantage for the MOS capacitors applications, and is helpful for the development of TiO2 film in the domain of high-k gate dielectrics applications.

关 键 词：栅介质 二氧化钛 层叠介质 射频磁控溅射 高介电常数 

分 类 号：TN304.2[电子电信—物理电子学]