InGaAs/InP材料的MOCVD生长研究  

Research of InGaAs/InP Materials Grown by MOCVD

作　　者：刘英斌[1] 林琳[1] 陈宏泰[1] 赵润[1] 郑晓光[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第2期113-115,120,共4页Semiconductor Technology

摘　　要：研究了InGaAs/InP材料的MOCVD生长技术和材料的性能特征。InP衬底的晶向偏角能够明显影响外延生长模型以及外延层的表面形貌,用原子力显微镜(AFM)观察到了外延层表面原子台阶的聚集现象(step-bunching现象),通过晶体表面的原子台阶密度和二维生长模型解释了台阶聚集现象的形成。对外延材料进行化学腐蚀,通过双晶X射线衍射(DCXRD)分析发现异质结界面存在应力,用异质结界面岛状InAs富集解释了应力的产生。通过严格控制InGaAs材料的晶格匹配,并优化MOCVD外延生长工艺,制备出厚层InGaAs外延材料,获得了低于1×1015cm-3的背景载流子浓度和良好的晶体质量。InGaAs/InP material growth morphology and the growth mode changing technique and the characteristics were discussed. The surface caused by InP substrate mis-orientation were analyzed. The trenches of multiple mono-layer （so called step-bunching） on the epi-layer surface were observed by AFM measurement. The step-bunching was explained by the surface step intensity and the two dimension growth mode. The materials were chemical etched layer by layer. The etched samples were analyzed by double crystal X-ray diffraction （DCXRD）. The origination of the strain was traced and explained by the InAs islands location on the interface. The mismatch between InGaAs and InP was exactly controlled. The bulk InGaAs material was grown under optimized MOCVD growth conditions. Very good crystal quality and low background concentration （1 ×10^15 cm-3） of InGaAs were achieved.

关 键 词：INGAAS 单原子层 台阶聚集 界面 金属有机物化学气相沉积 

分 类 号：TN304.055[电子电信—物理电子学]