用椭圆偏振光谱法研究Ga_xIn_(1-x)P的光学性质(Ⅰ)  

STUDIES ON THE OPTICAL PROPERTIES OF Ga x In 1 x P BY THE ELLIPSOMETRIC SPECTROSCOPY(Ⅰ)

作　　者：张淑芝[1] 张燕锋 黄伯标[2] 黄根生 秦晓燕 

机构地区：[1]山东大学光电系 [2]山东大学晶体材料国家重点实验室

出　　处：《山东大学学报（自然科学版）》1998年第4期410-415,共6页Journal of Shandong University(Natural Science Edition)

摘　　要：用变入射角椭圆偏振技术测量了用金属有机气相沉积（ＭＯＣＶＤ）方法在ＧａＡｓ衬底上生长的ＧａｘＩｎ１－ｘＰ以及掺Ｓｉ和掺Ｚｎ样品在可见光区室温下的光学常数．对其结果进行了讨论，给出了带隙Ｅｇ和跃迁Ｅｇ＋Δ０的能量值，Δ０的实验值与计算值符合的很好．Optical constants of Ga x In 1 x P and that doped by Si or Zn prepared by the metal organize chemical vapor phase deposition(MOCVD) on the GaAs substrate were measured by using the variable incident angle ellipsometric spectroscopy in the visible light region at room temperature.The results obtained were discussed.The energy gap Eg and the value of energy Eg+Δ 0 were obtained.The fitting between the experimental and theoretical values of Δ 0 is very good.

关 键 词：带隙 椭圆偏振光谱 化合物半导体 光学性质 

分 类 号：O472.3[理学—半导体物理] TN304.26[理学—物理]