Si(100)衬底上Mg_(0.33)Zn_(0.67)O薄膜的结构及光学性能  

Structure and Optical Properties of Mg_(0.33)Zn_(0.67)O Film Deposited on Si(100) Substrate

作　　者：刘全生[1] 张希艳[1] 王玉霞[1] 卢利平[1] 孙海鹰[1] 王晓春[1] 柏朝晖[1] 王能利[1] 米晓云[1] 

机构地区：[1]长春理工大学光电功能材料教育部工程研究中心,长春130022

出　　处：《光子学报》2010年第1期67-70,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(50772016)资助

摘　　要：采用射频磁控溅射法在Si(100)衬底上制备了Mg_(0.33)Zn_(0.67)O薄膜,研究了Mg_(0.33)Zn_(0.67)O薄膜的结构和光学性能。结果表明,Si(100)衬底上Mg_(0.33)Zn_(0.67)O薄膜呈六方纤锌矿结构,薄膜沿c方向取向生长,且c轴方向晶格增大0.03 nm。薄膜呈现优异的半导体特性,激子吸收峰位于297 nm,禁带宽度约为4.3 eV。薄膜平均粒径约为20 nm。薄膜在深紫外激发下的荧光发射位于368 nm。Mg0.33 Zn0.67 Ofilm was prepared on silicon（100） substrate by RF magnetron sputtering （RFMS） method. Structure and optical properties of Mg0.33 Zno, 67 Ofilm were studied. Result indicates that Mg0.33 Zn0.87 O film deposited on Si substrate is hexagonal wurtzite structure. The growth orientation of the film is along c axis and the lattice of c axis orientation increases 0. 03 nm. The film is present superior semiconductor property. The absorption peak of exciton is at 297 nm and the band gap of film is about 4.3 eV. The average grain diameter is about 20 nm. The fluorescent emission peak is at 368 nm under deepultraviolet excitation.

关 键 词：Mg0.33Zn0.67O薄膜 射频磁控溅射 硅衬底 紫外发光 

分 类 号：TB43[一般工业技术]