中频交流磁控溅射制备氧化锌铝(ZAO)薄膜的研究  

Al-doped ZnO (ZAO) Films Prepared by Middle-frequency Alternative Magnetron Sputtering

作　　者：刘江[1] 庄大明[1] 张弓[1] 李春雷[1] 段宇波[1] 

机构地区：[1]清华大学机械工程系,北京100084

出　　处：《中国表面工程》2010年第1期15-18,23,共5页China Surface Engineering

基　　金：国家863项目资助(2007AA05Z461)

摘　　要：利用两种中频交流磁控溅射电源,溅射Al2O3含量为2%的两块氧化锌铝陶瓷靶材,在不同衬底温度的条件下制备得到了ZAO薄膜。研究了不同衬底温度条件下不同靶材和溅射电源对ZAO薄膜结构、电学和光学性能的影响。结果表明,制备得到的ZAO薄膜均具有c轴择优取向生长的晶体结构,在衬底温度为240℃时,得到的ZAO薄膜的电阻率低至1.4×10-3Ω·cm,可见光平均透过率在82%以上。Al-doped ZnO （ZAO） films have been prepared by two middle-frequency alternative magnetron sputtering power apparatus at various substrate temperatures with sputtering two ZAO ceramic targets in this paper. The influences of substrate temperature under different sputtering power apparatus and targets on microstructure, optical and electrical performances of ZAO films were investigated. The results show that substrate temperature is a dominant factor for microstructure and electrical performances of ZAO thin films. ZAO films have a hexagonal wurtzite structure with its preferred orientation along the c-axis perpendicular to the substrate surface. The film prepared at the substrate temperature of 240 ℃ exhibited a lowest resistivity of 1.4 × 10^-3 Ω·cm and average transmittance of over 82 % in visible range.

关 键 词：ZAO薄膜 磁控溅射 电阻率 透过率 

分 类 号：O484[理学—固体物理] TG174.444[理学—物理]