新型高抗粘紫外纳米压印光刻胶的工艺研究  

Process Research of Novel UV Nanoimprint Lithography Resist with Enhanced Anti-Sticking Property

作　　者：李中杰[1] 林宏[2] 姜学松[2] 王庆康[1] 印杰[2] 

机构地区：[1]上海交通大学微纳科学技术研究院薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海200240 [2]化学化工学院高分子材料研究所,上海200240

出　　处：《微纳电子技术》2010年第3期179-182,192,共5页Micronanoelectronic Technology

基　　金：国家863项目(2006AA4Z334);上海市纳米科技专项(0852nm06600)

摘　　要：为了减少紫外纳米压印技术脱模过程中的接触粘附力,开发了一种新型高流动、抗粘的紫外纳米压印光刻胶。光刻胶以BMA为聚合单体,添加特定配比的交联剂和光引发剂配置而成。紫外纳米压印实验在本课题组自主研发的IL-NP04型纳米压印机上完成。实验得到光刻胶掩膜膜厚为1.21μm,结构尺寸深246nm,周期937.5nm。实验结果表明,在没有对石英模板表面进行修饰的情况下,该光刻胶依然表现出高可靠性和高图形转移分辨率,有效减少了紫外纳米压印工艺中的模板抗粘修饰的工艺步骤。In order to reduce the contact adhesion force during the demolding process in UV nanoimprinting lithography （UV-NIL）, a new anti-sticking UV nanoimprinting resist with enhanced fluidity was developed. The resist consists of BMA as the monomer, a specific ratio of the crosslinking agent and photoinitiator. IL-NP04 system was used in the experiment which was fabricated by the research team of Shanghai Jiao Tong University independently. The experiment shows that the thcikness of photoresist mask is 1.21 μm, the depth of nano-structure is 246 nm and the period of nano-structure is 937. 5 nm. The results indicate that the resist exhibits a high reliabili- ty and resolution of pattern transfer without modification on the surface of the quartz stamp, and the process steps of a anti-sticking layer modification in UV-NIL is reduced by using this resist with anti-sticking property.

关 键 词：紫外纳米压印 微/纳米尺寸图形 硅片衬底修饰 抗粘连层 图案复制 

分 类 号：TN305.7[电子电信—物理电子学]