A 4 W K-band GaAs MMIC power amplifier with 22 dB gain  

作　　者：黄正亮 郁发新 郑耀 

机构地区：[1]Institute of Astronautic Electronic Engineering,School of Aeronautics and Astronautics,Zhejiang University [2]Center for Engineering and Scientific Computation,School of Aeronautics and Astronautics,Zhejiang University

出　　处：《Journal of Semiconductors》2010年第3期70-73,共4页半导体学报（英文版）

摘　　要：A 4 W K-band AIGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor （PHEMT） monolithic microwave integrated circuit （MMIC） high power amplifier （PA） is reported. This amplifier is designed to fully match for a 50 f2 input and output impedance based on the 0.15μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss, and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.A 4 W K-band AIGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor （PHEMT） monolithic microwave integrated circuit （MMIC） high power amplifier （PA） is reported. This amplifier is designed to fully match for a 50 f2 input and output impedance based on the 0.15μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss, and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.

关 键 词：K-BAND power amplifier MMIC PHEMT 

分 类 号：TN722.75[电子电信—电路与系统] TN241