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机构地区:[1]Institute of Astronautic Electronic Engineering,School of Aeronautics and Astronautics,Zhejiang University [2]Center for Engineering and Scientific Computation,School of Aeronautics and Astronautics,Zhejiang University
出 处:《Journal of Semiconductors》2010年第3期70-73,共4页半导体学报(英文版)
摘 要:A 4 W K-band AIGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported. This amplifier is designed to fully match for a 50 f2 input and output impedance based on the 0.15μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss, and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.A 4 W K-band AIGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported. This amplifier is designed to fully match for a 50 f2 input and output impedance based on the 0.15μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss, and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.
关 键 词:K-BAND power amplifier MMIC PHEMT
分 类 号:TN722.75[电子电信—电路与系统] TN241
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