电泳沉积法制备CuO薄膜的微观结构分析  

Microstructure Analysis of CuO Thin Films Fabricated with Electrophoretic Deposition Method

作　　者：石锋[1] 李玉国[1] 孙钦军[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《半导体光电》2010年第1期87-89,共3页Semiconductor Optoelectronics

摘　　要：在经清洗后的硅(111)衬底上,分别采用电泳过程中氧化制备CuO薄膜和电泳制备Cu膜后退火氧化制备CuO薄膜。用XRD和SEM对薄膜样品进行了组分、表面形貌等微观结构的分析,发现两种方法制备的CuO薄膜的组分基本一致,但形貌完全不同,前者是由非常均匀的CuO小颗粒(200nm)相连而成团簇状,后者是由一些大小均匀的半径约为200nm的CuO小颗粒和气孔相互交融紧密连接而成的条状或块状。电泳过程中氧化制备的CuO薄膜结晶质量较好。Electrophoretic deposition method was adopted to deposite CuO thin films on cleaned Si （111） substrates. Some of the samples of CuO films were fabricated by oxidation in eleetrophoretie process and the others were fabricated by oxidation after annealing Cu thin films in air. XRD and SEM were used,to analyze the microstructure of CuO films, like components and surface topography. It is found that CuO films fabricated with the two methods basically have the same components but totally different surface topography. CuO films made with the former method are made up of clusters formed by homogeneous small CuO particles（200 nm）, while the latter ones are strips or blocks formed by mutual exchanged pores and uniform CuO particles with the radius of about 200 nm. Crystallization of the former CuO films has better quality.

关 键 词：电泳沉积法 CuO薄膜 微观结构 

分 类 号：TQ131.21[化学工程—无机化工]