热氧化法制备ZnO纳米棒及其结构表征  

Growth and Fabrication of ZnO Nanorods on SiO_2 Substrates

作　　者：李玉国[1] 卓博士[1] 张月甫[1] 张敬尧[1] 崔传文[1] 杨爱春[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《半导体光电》2010年第1期101-103,共3页Semiconductor Optoelectronics

基　　金：教育部留学回国人员科研启动基金资助项目

摘　　要：在无催化剂条件下,采用热蒸发Zn源,以N2为载气体,在SiO2衬底上反应沉积制备出单晶氧化锌纳米棒。XRD研究表明纳米棒为结晶完好的纤锌矿结构,并且为非定向生长,非定向生长的氧化锌纳米棒减弱了棒之间的屏蔽效应,表现出较好的场发射效果,为未来场发射电子器件的实际应用提供了可靠依据。By using N2 as the carrier gas and making thermal evaporation of Zn source, single crystalline ZnO nanorods were successfully synthesized on SiO2 substrates with the thermal vaperation deposition process without using any catalyst. XRD investigation confirmed that the ZnO nanorods have the wurtzite structure and are randomly grown, which reduces the screening effect and attributes the field emission effects. These features make the random ZnO nanorods be a competitive candidate for field emission flat panel display.

关 键 词：氧化锌 纳米棒 热蒸发 

分 类 号：O649[理学—物理化学]