直流磁控溅射ZnO:Al薄膜过程中氧气浓度的研究  

The Effect of Oxygen Concentration to DC Magnetron Sputtering ZnO:Al Films

作　　者：韦新颖[1] 祁康成[1] 袁红梅[1] 张良燕[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2010年第1期1-4,共4页Chinese Journal of Electron Devices

基　　金：四川省应用基础研究项目资助(2009JY0054)"ZnO/a-Si异质结太阳能电池研究"

摘　　要：采用直流磁控溅射的方法制备ZnO:Al(ZAO)透明导电薄膜,研究了氧气浓度对ZAO薄膜的结构、光电性质的影响。实验表明适当的氧气浓度是制备优质ZAO透明导电薄膜的关键。本实验条件下制备的ZAO薄膜最低电阻率为3.67×10-4Ω.cm,可见光部分透过率高于90%。The ZnO： Al （ZAO） films was prepared by the direct current magnetron sputtering method. And the effect of oxygen concentration to the structure and photoelectric properties of ZAO film has been studied. The results indicate that the proper oxygen concentration is the key factor of preparing high quality ZAO film successfully. The ZAO film fabricated on particular conditions in this paper shows a good c-axis-orientation, a lowest resistivity of 3.67 × 10^-4Ω·cm and an average visible light transmittance above 90 %.

关 键 词：直流磁控溅射 ZAO薄膜 电阻率 透过率 

分 类 号：TB303[一般工业技术—材料科学与工程]