3d过渡金属掺杂GaAs的居里温度研究  

THE RESEARCH OF CURIE TEMPERATURE FOR GaAs DOPED WITH 3d TRANSITION METAL

作　　者：陈余[1] 关玉琴[1] 

机构地区：[1]内蒙古工业大学理学院,呼和浩特010051

出　　处：《内蒙古工业大学学报（自然科学版）》2009年第3期188-192,共5页Journal of Inner Mongolia University of Technology：Natural Science Edition

基　　金：国家自然科学基金资助项目(10862002);内蒙古工业大学校基金X200930

摘　　要：本文用Zener模型对GaAs掺杂3d过渡金属(TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni)的居里温度进行理论计算.文中详细介绍了GaAs材料的晶体结构和基本参数;推导了计算居里温度的函数表达式;并计算了不同元素在不同掺杂浓度下的居里温度值,通过计算得到如下结论:3d过渡金属取代Ga位置时,掺杂Cr和Mn时居里温度较高,可以实现室温铁磁性,掺杂其余元素时居里温度很低;3d过渡金属取代As位置时除了掺杂V和Ni居里温度很低以外,其余均可获得室温铁磁性;取代As位置时合成的DMS材料的居里温度普遍高于取代Ga位置时的居里温度.Based on Zener model,a theoretical calculation of curie temperature for GaAs doped with 3d transition metal（TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni） has been made.A detailed introduction is given to the crystal structure and basic parameters of GaAs materials.For calculating Curie temperature,a function expression is deduced.Curie temperature of GaAs doped with different element of different concentration is calculated.A conclusion is drawn as follows：when Ga is partially replaced by 3d transition metal,Curie temperature of（GaTM） As appears higher when Cr or Mn is doped instead of other elements.In this case,room temperature ferromagnetism can be achieved.However,when As is partially replaced by 3d transition metal,Curie temperature of all the Ga（AsTM） materials,except when V or Ni is doped,gets high enough for room temperature ferromagnetism to be achieved.Curie temperature of the complex DMS material is generally higher when As is replaced than when Ga is replaced.

关 键 词：稀磁半导体 居里温度 Zener模型 掺杂浓度 

分 类 号：O472.5[理学—半导体物理]