MOCVD生长GaN的两种反应机制  

Two kinds of reaction mechanism for GaN growth by MOCVD

作　　者：陈鹏[1] 沈波[1] 杨凯[1] 陈浩[1] 赵卫强[1] 陈志忠[1] 郑有[1] 

机构地区：[1]南京大学

出　　处：《半导体光电》1998年第6期366-369,共4页Semiconductor Optoelectronics

基　　金：国家863计划

摘　　要：用ＭＯＣＶＤ生长ＧａＮ的过程中，由于ＮＨ３与ＴＭＧ化学性质的巨大差异，以及通常１０００℃以上的生长温度，使得其中反应过程比较复杂，且多种反应并存。文章首先对这样一个多元体系运用原子系数矩阵，计算出反应体系中存在的独立反应方程，得到两组代表不同反应机制的独立反应。描述了两组反应的主要特征。计算了以ＮＨ３为氮源，以ＴＭＧ为镓源，ＭＯＣＶＤ生长ＧａＮ过程中各种热力学平衡参数。由计算结果知，ＮＨ３的不彻底分解的反应是ＭＯＣＶＤ中正常生长ＧａＮ的化学反应。Due to the difference in chemical property between NH 3 and TMG,and growth temperature of over 1 000 ℃,the process of GaN grwoth is more complex and exists various reactions.In this letter,two groups of independent reactions representing different reaction mechanism are obtained by calculating the atomic coefficient matrix.The characteristics of two groups of the reactions are described.The parameters of thermodynamic equilibrium are calculated during the process of GaN growth by MOCVD using NH 3 as N source and TMG as Ga source.The result shows that the incomplete decomposition for NH 3 will lead to regular growth of GaN.

关 键 词：氮化镓 独立反应方程 热力学平衡 并入率 

分 类 号：TN304.054[电子电信—物理电子学] TN304.23