低压CMOS带隙基准电压源设计  

Design of Low Voltage CMOS Bandgap Voltage Reference

作　　者：宁江华[1] 王基石[1] 杨发顺[1,2] 丁召[1,2] 

机构地区：[1]贵州大学理学院,贵州贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵州贵阳550025

出　　处：《现代电子技术》2010年第7期115-117,共3页Modern Electronics Technique

基　　金：贵州省科技攻关项目"高精度低漂移集成电压基准源研制"(GY[2008]3033);贵州大学研究生创新基金资助

摘　　要：基准源是模拟集成电路中的基本单元之一,它在高精度ADC,DAC,SoC等电路中起着重要作用,基准源的精度直接控制着这些电路的精度。阐述一个基于带隙基准结构的Sub-1 V、低功耗、低温度系数、高电源抑制比的CMOS基准电压源。并基于CSMC 0.5μm Double Poly Mix Process对电路进行了仿真,得到理想的设计结果。Voltage reference is a basic cell of analog integrated circuits.It performs an important role in many analog ICs whose precision is controlled by the precision of these cells,such as ADC,DAC,SOC and so on.A CMOS voltage reference circuit with Sub-1 V output voltage,low power consumption,low temperature coefficient and high PSRR is introduced.The simulation for the circuit was performed based on the CSMC 0.5 μm double poly mix process.The ideal design results were gained.

关 键 词：CMOS基准电压源 低功耗 Sub-1V 高电源抑制比 

分 类 号：TM13[电气工程—电工理论与新技术]