156GHz 0.15μm GaAs Metamorphic HEMT器件研制  

High Performance 0.15 μm GaAs Metamorphic HEMTs with 156 GHz Transit Frequency

作　　者：康耀辉[1] 高建峰[1] 黄念宁[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家级重点实验室,南京210016

出　　处：《固体电子学研究与进展》2010年第1期51-53,128,共4页Research & Progress of SSE

摘　　要：应用电子束直写技术成功制作了栅长0.15μm的高性能In0.52Al0.48As/In0.53Ga0.47As GaAs MHEMT。从工艺角度,结合器件的小信号等效电路的理论分析,优化了器件源漏间距,从而减小了器件寄生参数,达到了较好的器件性能。最终制作的In0.52Al0.48As/In0.53Ga0.47As MHEMT饱和电流达到495mA/mm,夹断电压-0.8V,在Vgs为-0.19V时的最大非本征跨导gm为1032mS/mm,截止频率ft达到156GHz,最大振荡频率fmax大于150GHz。In this work, a 0.15 μm gate length In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors （MHEMT） was fabricated using E-beam lithography. In view of the processing and the device small-signal equivalent circuit theory, we optimized the device structure, especially source and drain configuration to decrease the device parasitic parameter, and obtain the perfect performance. Some key performances of this In0.52Al0.48As/In0.53Ga0.47As MHEMT are as follows： high saturation current density with a value typically around 495 mA/mm, measured threshold voltage of -0.8 V, high value of peak extrinsic transconductance （gin） of 1 032 mS/mm at a gate voltage of -0. 19 V, determined peak ft of 156 GHz and the corresponding fmax of higher than 150 GHz.

关 键 词：渐变组分高迁移率晶体管 T形栅 截止频率 

分 类 号：TN386.3[电子电信—物理电子学]