工艺参数对真空紫外光直接光CVD SiO_2-Si界面特性的影响  

Effect of Deposition Condition on Interfacial Properties of SiO 2 Si Formed by VUV Light Direct Photo CVD

作　　者：谢茂浓[1] 杜开瑛[1] 刘玉荣 

机构地区：[1]四川联合大学

出　　处：《半导体技术》1998年第6期23-26,共4页Semiconductor Technology

基　　金：四川省科委基金

摘　　要：采用高频（１ＭＨｚ）Ｃ－Ｖ测试和红外谱，研究了工艺参数对Ｘｅ激发真空紫外光直接光ＣＶＤＳｉＯ２的ＳｉＯ２／Ｓｉ界面特性的影响。结果表明，衬底温度Ｔｓ对固定氧化物电荷密度ΔＮｏｔ、慢界面态密度ΔＮｓｔ的影响比反应室总气压Ｐｃ和ＳｉＨ４／Ｏ２分压比显著。ΔＮｏｔ和ΔＮｓｔ在１１０℃附近有极小值，约为１０１０ｃｍ－２量级。Ｔｓ＞１２０℃，ΔＮｏｔ呈正电荷性，Ｔｓ＜１１０℃，ΔＮｏｔ呈负电荷性。Ｓｉ—Ｏ—Ｓｉ伸缩振动吸收峰位在１０６０～１０８０ｃｍ－２间，随Ｔｓ的减少而增加。Using high frequency(1MHz)capacitance voltage( C V )test and the infrared(IR) spectroscopy,the effect of the deposition condition on the interfacial properties of the CVD SiO 2 formed by the vacuum ultraviolet(VUV)light is studied.The results show that the effect of substrate temperature on the fixed oxide charge density ΔN ot is notable than the total pneumatic of the reaction chamber P c and the part pneumatic ratio of SiH 4/O 2 ΔN ot and ΔN st have minimum values in the order of 10 10 cm -2 when T s near 110℃.The oxide charge( ΔN ot )is positive charge for T s>120℃,the oxide charge is negative charge for T s<100℃.The IR peak of Si—O—Si stretching modeis between 1060￣1080cm -2 ,and increases as T s decreases.

关 键 词：高频C-V特性 光CVD 硅 二氧化硅 

分 类 号：TN304.12[电子电信—物理电子学] TN304.21