大直径CZ硅单晶的控氧技术  

Oxygen Control Technology for Large Diameter CZ Grown Silicon Single Crystal

作　　者：施锦行[1] 

机构地区：[1]中南工业大学应用物理与热能工程系

出　　处：《半导体技术》1998年第6期46-49,共4页Semiconductor Technology

摘　　要：描述了拉晶条件和磁拉法对大直径ＣＺ硅单晶中氧的控制作用，并讨论了近期发展的ＣＣＺ法和ＬＦＣＺ法中与控氧相关的问题。This paper is concerned with the oxygen control technology which is used in CZ growth of large diameter silicon single crystal.The pulling condition adjustment and magnetic field applied CZ method are two kinds of main techniques for oxygen control.The recent development of CCZ and LFCZ method are also discussed in terms of oxygen control.

关 键 词：大直径 硅单晶 磁拉法 控氧 

分 类 号：TN304.12[电子电信—物理电子学]