一种新型透明导电氧化物薄膜—ITO∶Ta  

Novel transparent conductive films ITO:Ta

作　　者：张波[1] 于波[1] 徐晓峰[2] 赵培[3] 

机构地区：[1]常州机电职业技术学院,常州213164 [2]东华大学理学院,上海200051 [3]中国科学院上海技术物理研究所,上海200083

出　　处：《光电子．激光》2010年第1期59-62,共4页Journal of Optoelectronics·Laser

摘　　要：利用磁控溅射,在玻璃基底上沉积了ITO∶Ta薄膜。研究了在不同衬底温度下ITO和ITO∶Ta薄膜的光电性能。高价金属元素Ta掺杂促进薄膜晶化的同时,导致了(400)晶面择优取向的形成。低温沉积的ITO∶Ta薄膜比ITO薄膜展示了较好的光电性能,Ta掺杂使得室温沉积ITO薄膜的效益指数分别由0.003×10-3Ω-1上升到了0.880×10-3Ω-1。透射谱表明,参数的变化引起明显的Burstin-Moss效应,通过直接跃迁的模型研究了光学禁带的变化。ITO∶Ta films are deposited on glass substrates by magnetron sputtering.Electrical and optical properties of ITO and ITO∶Ta films with different substrate temperature are studied.The doping of high-valence metal element Ta favors a better crystalline structure and leads to the formation of the（400）plane preferred orientation.ITO∶Ta films at low substrate temperature show better electrical and optical properties than ITO films.The doping of Ta improves the figure of merit of ITO films deposited at room temperature from 0.003×10^-3 Ω^-1 to 0.880×10^-3 Ω^-1.An obvious Burstin-Moss effect can be revealed by transmittance spectra with parameters,and the direct transition models show the change of optical band gap of the films.

关 键 词：薄膜 磁控溅射 衬底温度 光学禁带宽度 

分 类 号：O484.4[理学—固体物理]