磁控溅射技术制备织构化表面Al掺杂ZnO薄膜  

Textured surface aluminum-doped zinc oxide thin films prepared by direct current magnetron sputtering

作　　者：李林娜[1] 陈新亮[1] 刘晨[1] 孙建[1] 耿新华[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津300071

出　　处：《光电子．激光》2010年第4期559-564,共6页Journal of Optoelectronics·Laser

基　　金：国家"973"重点基础研究资助项目(2006CB202602;2006CB202603);天津市科技攻关资助项目(06YFGZGX02100);天津市应用基础及前沿技术研究计划资助项目(09JCYBJC06900)

摘　　要：以Zn-Al(Al:2wt.%)合金为溅射靶材,采用直流反应磁控溅射的方法,在普通玻璃衬底上制备Al掺杂ZnO(AZO)薄膜。通过对衬底温度的调制,在较高衬底温度下(～280℃),无需经过常规溅射后腐蚀工艺过程,即可获得表面形貌具有特征陷光结构的AZO薄膜,其表面呈现"类金字塔"状,粗糙度RMS=65.831nm。通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了衬底温度对AZO薄膜性能的影响。X射线衍射(XRD)和扫描电子显微镜(SEM)测试表明,所有样品均为多晶六角纤锌矿结构,薄膜呈(002)晶面择优生长,其表面形貌随衬底温度的不同而改变。衬底温度为200℃及其以上工艺条件下获得的AZO薄膜,在可见光及近红外范围的平均透过率大于90%,电阻率优于1.5×10-3Ωcm。In general, flat surface zinc oxide thin films without textured structure were grown via magnetron sputtering methods. In this experience, textured surface aluminum doped zinc oxide（AZO） thin films were prepared by direct current（DC） magnetron reactive sputtering on common floating glass. High purity metallic Zn-Al （purity：99. 999% ,Al：2wt. %） target and oxygen （purity： 99. 999%） were used as source materials. At the higher substrate temperature of -280℃ ,textured surface AZO thin film with pyramid-type morphology was obtained,without going through the process of wet-etching after sputtering. The microstructure and surface information,optical and electrical properties of AZO films with vari- ous substrate temperatures were investigated in detail. According to XRD and SEM test results,all samples we obtained were polycrystalline, hexagonal wurtzite structure with oriented in the （002） crystallo- graphic direction. These AZO films showed different surface morphology with various substrate temperatures. The average transmissions of AZO thin films above 200℃ were more than 90% in the visible and near-infrared range and the resistivities of these films were less than 1.5× 10-3 Ωcm.

关 键 词：ZNO 磁控溅射 织构化表面 衬底温度 太阳电池 

分 类 号：TN304[电子电信—物理电子学]