退火工艺对含Ti-Al阻挡层的硅基Pb(Zr_(0.4),Ti_(0.6))O_3铁电电容器结构和性能影响的研究  

Effect of Annealing Conditions on the Structural and Physical Properties of Si-based Pb(Zr_(0.4),Ti_(0.6))O_3 Ferroelectric Capacitors with Ti-Al Film As a Barrier Layer

作　　者：郭颖楠[1] 刘保亭[1] 赵敬伟[1] 王宽冒[1] 王玉强[2] 孙杰[2] 陈剑辉[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002 [2]河北大学电子信息工程学院,保定071002

出　　处：《人工晶体学报》2010年第1期62-66,71,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60876055);河北省自然科学基金(E2008000620;E2009000207);教育部科学技术研究重点项目(No.207013);河北省应用基础研究计划重点基础研究项目(08965124D)

摘　　要：应用非晶的Ti-Al薄膜为导电阻挡层,采用射频磁控溅射法和溶胶-凝胶法在Si衬底上制备了La0.5Sr0.5CoO3/Pb(Zr0.4,Ti0.6)O3/La0.5Sr0.5CoO3/Ti-Al/Si(LSCO/PZT/LSCO/Ti-Al/Si)异质结,研究了550℃常规退火(CTA)和快速退火(RTA)工艺对LSCO/PZT/LSCO/Ti-Al/Si结构和性能的影响。实验发现非晶Ti-Al薄膜在经过不同退火工艺后仍具有非晶结构,快速退火6min的样品具有较好的物理性能。在418kV/cm的外加电场下,LSCO/PZT/LSCO电容器的剩余极化强度和矫顽电场强度分别为22μC/cm2和83kV/cm。LSCO/PZT/LSCO电容器的漏电行为不依赖于退火工艺,当电场强度低于46.7kV/cm时为欧姆导电,高于46.7kV/cm时为肖特基导电机制。La0.5Sr0.5CoO3/Pb（Zr0.4,Ti0.6）O3/La0.5Sr0.5CoO3/Ti-Al/Si （LSCO/PZT/LSCO/Ti-Al/Si） heterostructure was fabricated on Si substrate by RF magnetron sputtering and sol-gel methods,using amorphous Ti-Al films as barrier layer.The effect of annealing conditions （550 ℃ using conventional thermal annealing （CTA） and rapid thermal annealing （RTA）） on the structural and physical properties of Si-based Pb（Zr0.4,Ti0.6）O3 ferroelectric capacitors were investigated.It is found that amorphous Ti-Al film is still amorphous after high temperature annealing,and RTA for 6 min can yield the best physical results for the LSCO/PZT/LSCO capacitor,whose remnant polarization and coercive electric field are 22 μC/cm2 and 83 kV/cm,respectively.Moreover,it is also found that leakage mechanism of LSCO/PZT/LSCO capacitor does not depend on the annealing conditions.It is Ohmic conduction at applied fields smaller than 46.7 kV/cm,and Schottky conduction at fields higher than 46.7 kV/cm.

关 键 词：退火工艺 PZT 磁控溅射法 溶胶-凝胶法 

分 类 号：O484[理学—固体物理]