光电集成光接收机前端及限幅放大器的研制  

Fabrication of Optoelectronic Integrated Circuits Optical Receiver Front-End and Limiting Amplifier

作　　者：范超[1,2] 陈堂胜[2] 杨立杰[2] 冯欧[2] 焦世龙[1,2] 吴云峰[1] 叶玉堂[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054 [2]南京电子器件研究所,江苏南京210016

出　　处：《光学学报》2010年第3期777-781,共5页Acta Optica Sinica

基　　金：单片集成电路与模块国家级重点实验室基金(9140C1406020708)资助课题

摘　　要：基于国内的材料生产和半导体工艺条件,研制了10 Gb/s光电集成(OEIC)光接收机前端,并采用耗尽型赝配高电子迁移晶体管(PHEMT)设计并实现了限幅放大器。光接收机前端组成形式为金属-半导体-金属(MSM)光探测器和电流模跨阻放大器,借助模拟软件SILVACO建立并优化了器件模型,探测器光敏面50μm×50μm,带宽超过10 GHz,电容约3 fF/μm。研究并改进了腐蚀自停止工艺并实际应用于OEIC器件制作,芯片面积为151Iμm×666μm。限幅放大器采用无源电感扩展带宽,并借助三维电磁仿真软件HFSS进行模拟仿真。限幅放大器芯片面积为1950μm×1910μm,在3.125 Gb/s传输速率下,分别输入信号幅度为10和500 mV,可以得到500 mV恒定输出摆幅。A 10 Gb/s optoelectronic integrated circuits（OEIC） optical receiver front-end has been studied and fabricated based on domestic material and semiconductor process.A limiting amplifier（LA） has been designed and realized by using depletion mode pseudomorphic high electron mobility transistor（PHEMT）.The OEIC optical receiver comprises a metal-semiconductor-metal（MSM） photodetector and a current mode transimpedance amplifier （TIA）,and a device model has been established and optimized by simulation software SILVACO.The photodetector has a photosensitive area of 50μm×50μm,a bandwidth of 10 GHz and a capacitance of 3 fF/μm.The etch-stop process has been developed completely and applied to the fabrication of OEIC device,and the chip has an area of 1511μm×666μm.The bandwidth of LA is expanded by inductance which has been simulated by software HFSS. The chip area is 1950μm×1910μm and the measured results demonstrate a transfer rate of 3.125 Gb/s（10 and 500 mV） with constant output swing 500 mV.

关 键 词：集成光学 金属-半导体-金属光探测器 电流模跨阻放大器 限幅放大器 

分 类 号：TN256[电子电信—物理电子学]