磁控溅射制备ZrN_x薄膜离子导体性能研究  

Study on the ionic conductivity of ZrN_x films by magnetron sputtering

作　　者：黄佳木[1,2] 覃丽禄[2] 董思勤[2] 

机构地区：[1]重庆大学国家镁合金材料工程技术研究中心,重庆400044 [2]重庆大学材料科学与工程学院,重庆400045

出　　处：《功能材料》2010年第3期450-452,456,共4页Journal of Functional Materials

摘　　要：采用射频反应磁控溅射工艺,以纯Zr为靶材,在WO3/ITO/Glass基片上采用不同工艺参数沉积ZrNx薄膜,用紫外-可见分光光度计、循环伏安法、X射线衍射仪、扫描电镜等研究了ZrNx薄膜的离子导电性能。研究结果表明,所制备的ZrNx薄膜为非晶态,ZrNx/WO3/ITO/Glass复合膜的光学调节范围最大达57%以上,在离子传导过程中表现出良好的离子导电性能。Using pure zirconium and chromium as targets,ZrNx films were deposited on WO3/ITO/Glass substrates by reactive magnetron sputtering.The films were analyzed by UV-Vis spectrophotometer,cyclic voltammetry（CV）,X-ray diffractometer（XRD）,FEG-SEM and so on.The ion conductor properties of the ZrNx films were studied.The research results show that the ZrNx films deposited by reactive magnetron sputtering are amorphous.The maximum optical modulation range of ZrNx/WO3/ITO/Glass device is more than 57%.The ZrNx films exhibit good ionic conductivity in the ion conductive process.

关 键 词：射频反应磁控溅射 氮化锆薄膜 离子导体 

分 类 号：TB34[一般工业技术—材料科学与工程]