Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory  

作　　者：李卫 徐岭 赵伟明 丁宏林 马忠元 徐骏 陈坤基 

机构地区：[1]National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University [2]College of Electronic Science and Engineering,Nanjing University of Posts and Telecommunications

出　　处：《Chinese Physics B》2010年第4期408-412,共5页中国物理B（英文版）

基　　金：Project supported by National Natural Science Foundation of China(Grant Nos.10874070,60976001,and 50872051);Natural Science Foundation of Jiangsu Province of China(Grant No.BK2008253);State Key Program for Basic Research of China(Grant Nos.2007CB935401 and 2010CB934402);Natural Science Foundation of Jiangsu Province for Universities(Grant No.09KJB510014);Nanjing University of Posts and Telecommunications Research Fund(Grant No.NY208057 and JG03309JX37)

摘　　要：This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO2 layer on p-type Si （100）. Capacitance-voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance-time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 104 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO2 layer on p-type Si （100）. Capacitance-voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance-time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 104 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.

关 键 词：METAL-OXIDE-SEMICONDUCTOR CAPACITANCE-VOLTAGE capacitance time Ni nanoparticles 

分 类 号：TM53[电气工程—电器]