辅助PECVD的磁场模拟计算与分析  

Magnetic-field-aided analog computation and analysis of plasma enhanced chemical vapor deposition

作　　者：陈长琦[1] 赵晶晶[1] 汪洪波[1] 王君[1] 

机构地区：[1]合肥工业大学机械与汽车工程学院真空科学技术与装备研究所,安徽合肥230009

出　　处：《真空》2010年第2期27-30,共4页Vacuum

摘　　要：本文介绍了磁场辅助PECVD工作原理,磁场对沉积薄膜的影响。通过对PECVD中磁场对带电粒子的约束作用、等离子体能量转换频率分析,建立辅助磁场模型并进行数值计算。在现有辅助磁场基础上改进设计适用于PECVD设备的螺线管磁场系统,得到不同物理条件下磁场分布规律。进而确定螺线管结构参数得到均匀分布的磁场,为辅助PECVD磁场的应用提供了一种方法。The working principle of magnetic-field-aided PECVD and how the magnetic field affects the deposition of thin films were investigated. The model of the magnetic field as an aid was developed for numerical computation through analyzing the restriction of magnetic field on charged particles and frequency of the plasma energy conversion in PECVD （plasma enhanced chemical vapor deposition）. The distribution of the magnetic field under different physical conditions was obtained the way the existing magnetic field was improved by designing a solenoid magnetic field applicable to PECVD system, for which the structural parameters of solenoid were determined so as to make the magnetic field distribution uniform. A method was thus offered for the applications of magnetic-field-aided PECVD.

关 键 词：PECVD 等离子体 辅助磁场 螺线管 

分 类 号：O532.11[理学—等离子体物理]