SiO_2和HfO_2薄膜光学性能的椭偏光谱测量  

Spectroscopic Ellipsometry for Determining the Optical Properties of SiO_2 and HfO_2 Thin Films

作　　者：吴倩[1] 陈松林[1] 马平[1] 王震[1] 罗晋[1] 潘峰[1] 

机构地区：[1]成都精密光学工程研究中心,四川成都610000

出　　处：《光学与光电技术》2010年第2期50-53,共4页Optics & Optoelectronic Technology

摘　　要：结合XRD和原子力显微镜等方法,利用椭圆偏振光谱仪测试了单层SiO_2薄膜(K9基片)和单层HfO_2薄膜(K9基片)的椭偏参数,并用Sellmeier模型和Cauchy模型对两种薄膜进行拟合,获得了SiO_2薄膜和HfO_2薄膜在300～800 nm波段内的色散关系。用X射线衍射仪确定薄膜结构,并用原子力显微镜观察薄膜的微观形貌,分析表明:SiO_2薄膜晶相结构呈现无定型结构,HfO_2薄膜的晶相结构呈现单斜相结构;薄膜光学常数的大小和薄膜的表面形貌有关;Sellmeier和Cauchy模型较好地描述了该波段内薄膜的光学性能,并得到薄膜的折射率和消光系数等光学常数随波长的变化规律。XRD, AFM and SE were used to measure and analyze optical properties of SiO2 and HfO2 thin films. Sellmeier and Cauchy dispersion model were used to calculate the refractive index, extinction coefficient and thickness of thin films in the visible region of the spectrum between 3004800 nrn. The X-ray diffraction （XRD） was used to confirm the phase structure of the thin films, and the atomic force microscopy （AFM） was used to observe the surface microstructure of the thin films. The results show that the phase structure of SiO2 film is amorphism, the phase structure of HfO2 film is monoclinic. The thin film optical properties was correlative with thin film microstructure. Sellmeier and cauchy dispersion model could describe optical properties of SiO2 and HfO2 film very well and the variation rule of the optical properties with wavelength was obtained.

关 键 词：薄膜 光学参数 椭偏测量 光谱 

分 类 号：O436[机械工程—光学工程]