射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜  

Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

作　　者：林兰[1] 叶志镇[1] 龚丽[1] 别勋[1] 吕建国[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《发光学报》2010年第2期199-203,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金重点(50532060);高等学校博士学科点专项科研基金(20060335087)资助项目

摘　　要：采用射频反应磁控溅射法退火生长得到了Na-N共掺杂p-ZnO薄膜。XRD测试结果表明,退火前后均得到c轴择优取向的ZnO薄膜。Hall测试结果表明:退火后薄膜的电学性能明显改善,得到了p-ZnO薄膜,退火温度为450℃时取得最佳电学性能:室温电阻率为139.2Ω.cm,迁移率为0.2cm2.V-1.s-1,空穴浓度为2.5×1017cm-3。XPS分析表明:Na掺入ZnO中作为受主NaZn而存在,N主要以N—H键的形式存在,其受主NO的作用不明显,但是否存在NaZn-NO受主复合体,还需进一步的研究。Na-N co-doped p-type ZnO [ZnO：（Na,N）] thin films were prepared on glass substrates by RF reactive magnetron sputtering and post-annealing techniques in the N2O ambient.X-ray diffraction （XRD） measurements showed that all films possessed a good crystallinity with c-axis preferential orientation.After annealing,the intensity of the （002） diffraction peak and the value of 2θ increase and the FWHM decreases.Hall measurements showed that the electrical properties of ZnO：（Na,N） films were improved after annealing and the p-type behavior was realized.The film annealed at 450 ℃ showed the lowest resistivity of 139.2 Ω·cm with a Hall mobility of 0.2 cm2·V^-1·s^-1 and a carrier concentration of 2.5×10^17 cm^-3.XPS measurements showed that NaZn acceptor in ZnO：（Na,N） is responsible for the p-type conductivity of the ZnO：（Na,N）.In addition,Na-N complex may exist in the films,which acts as acceptor.Detailed investigation is now in progress.

关 键 词：射频反应磁控溅射 Na-N共掺 P型ZNO薄膜 退火 

分 类 号：O484.1[理学—固体物理] O472.4[理学—物理]