Si(001)衬底上闪锌矿ZnO的制备与分析  

Growth and Investigation of Zincblende ZnO on Si(001)

作　　者：詹华瀚[1] 黄斌旺[1] 吴雅苹[1] 陈晓航[1] 李书平[1] 康俊勇[1] 

机构地区：[1]厦门大学福建省半导体材料与应用重点实验室物理系及半导体光子学研究中心,福建厦门361005

出　　处：《发光学报》2010年第2期209-213,共5页Chinese Journal of Luminescence

基　　金：福建省自然科学基金(2009J01267)资助项目

摘　　要：采用分子束外延方法在室温下于Si(001)表面上生长ZnO材料。实验发现:样品为闪锌矿和六角结构的ZnO混合多晶薄膜,其表面分布着一系列具一定取向的近似长方形的纳米台柱结构。在不同参数的高温退火后,这些梯形台柱将变小,形成梯形纳米环,或分解为较小的纳米柱及其团簇结构等。分析表明:ZnO混合多晶薄膜的形成,以及表面纳米台柱的演变,与Si(001)衬底、较低温的生长温度及热效应等因素相关联。In recent years,zinc oxide （ZnO） has received much attention due to its potential applications in blue and ultraviolet devices.High quality and high efficiency p-type doping is still a big challenge for their studies and device applications.Zincblende ZnO is suggested to be one possible key to overcome this obstacle.Metastable thin zincblende ZnO film has been realized on GaAs（001）,sapphire,and Pt（111）/Ti/SiO2/Si（100） multilayered substrates using a ZnS buffer/interlayers for the growth.However,due to the very large lattice mismatching,silicon is not the idealist substrate for the epitaxial growth of single crystal ZnO,while a great variety of wurtzite ZnO nano-structures have been constructed on Si（001）. In this work,a plasma assistant molecular beam epitaxy was employed to grow the zincblende ZnO directly on Si（001） substrate at room temperature,and the growth kinetics was simply explored.The samples were grown and post-annealed under modulated growth conditions.They were zincblende polycrystalline embedded with wurtzite subdomains revealed by in-situ scanning tunneling microscopy and X-ray diffraction measurements.Nano trapezoid columns were observed on the as-grown samples.Nanostructural rings and clusters were depicted during the surface evolution after annealing. Though the zincblende ZnO is quite stable in ambient conditions,the metastable phase can be realized only under some critical conditions,such as the initial stage of ZnO nucleation during the epitaxial growth.The wurtzite ZnO generally has a growth privilege over the zincblende ZnO.Since the silicon substrate has a cubic symmetry lattice,it could result in formation of the zincblende ZnO in square structure at the initial growth,especially under the very low epitaxial temperature,i.e.room temperature.With the increasing of the thin film thickness,the influence from the substrates decreases,then the growth turns to favor for more stable wurtzite structure.Thus,the samples became zincblende polycrystalline embedded with wurt

关 键 词：闪锌矿结构 氧化锌 分子束外延生长 硅(001) 

分 类 号：O472.1[理学—半导体物理] O482.31[理学—物理]