Ⅱ-Ⅵ族化合物半导体电化学原子层外延  

Electrochemical Atomic Layer Epitaxy of Ⅱ-Ⅵ Compound Semiconductors

作　　者：樊玉薇[1] 李永祥[1] 吴冲若[1] 

机构地区：[1]东南大学电子工程系,南京210096

出　　处：《真空科学与技术》1998年第4期302-307,共6页Vacuum Science and Technology

基　　金：国家自然科学基金!69406002

摘　　要：介绍一种外延沉积化合物半导体材料的新方法──电化学原子层外延技术，它将电化学沉积技术与原子层外延技术结合起来，通过运用欠电势技术交替电化学沉积化合物的组成元素一次一个单原子层而实现外延生长。从而使外延技术具有电沉积简单与低成本的优点。欠电势沉积是电化学原子层外延的关键，它是化合物形成过程中放出自由能的结果。并研究了Si-Au多晶衬底上沉积CdTe的电化学原子层外延，给出了初步实验结果。A simple and low cost technique was successfully developed to epitaxially grow Ⅱ-Ⅵ compound semiconductor films. The technique may be referred to as electrochemical atomic epitaxy, because it is a combination of two feasible growth techniques, the electrochemical deposition and atomic layer epitaxy. The growth involves the alternating electro-deposition of each component element of a compound ,one monolayer at a time by underpotential deposition that is critical in electrochemical atomic layer epitaxy. We found that the free energy released in compound formation in underpotential deposition is favorable to film growth. Preliminary results in our study of CdTe films grown on Si-Au substrate by electrochemical atomic layer epitaxy were also discussed.

关 键 词：电化学 原子层外延 Ⅱ-Ⅵ族 化合物半导体 

分 类 号：TN304.25[电子电信—物理电子学] TN304.054