离子束增强沉积TiN薄膜的研究  

Investigation of Titanium Nitrides Thin Films Prepared by Ion Beam Enhanced Deposition

作　　者：向伟[1] 赖祖武 罗四维[1] 方仁昌[1] 李文治[2] 

机构地区：[1]中国工程物理研究院应用电子学研究所,成都610003 [2]清华大学材料科学与工程系,北京100084

出　　处：《真空科学与技术》1998年第4期308-312,共5页Vacuum Science and Technology

摘　　要：利用多功能离子束增强沉积设备，采用三种不同工艺方法制备TiN薄膜，并对制备的TiN薄膜进行了AES，XPS，XRD，RBS和TEM等分析。结果表明：所制备的薄膜都有很好均匀性，TiN薄膜处在压应力状态；在溅射沉积的同时，在0～20keV范围内，N+和Ar+离子的轰击使得TiN薄膜的生长呈现不同择优取向；随着N+离子轰击能量的增加，制备的TiN薄膜的晶粒增大。Titanium nitride thin filmsr were grown by ion beam enhanced depostion under different conditions. The composition depth profiles and their dependence on structures were studied with AES, XPS, XRD, RBS and TEM techniques. The results showed that in almost all cases, the TiN filmsr have a homogeneous coposition and a compressive stress.The TiN films, grown simultaneously under the N+ and Ar+ ion bombardment with an energy ranging from 0 to 20keV, have different prefrential growth orientations. As the N ion bombarding energy increases from 0 to 20 keV, the grain sizes of the TiN films increase considerably.

关 键 词：离子束增强沉积 离子轰击 薄膜 氮化钛 

分 类 号：O484[理学—固体物理]